Marchenkov

The authors carried out numerical modeling of titanium dioxide memristor working frequency and power consumption. The model of memristor consists of two resistors connected in series; their resistance depends on the layers barrier between the oxygen layer and the TiO₂ layer. For the first time the memristor power consumption at structural parameters dependences was analyzed. It was shown that  significant increase of working frequency under the conditions of decrease of active layer thickness and total memristor thickness leads to the increase of memristor power consumption. The optimal values of active layer thickness and total memristor thickness were defined in this article, basing on the obtained data.