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Promising structures with memory based on inorganic materials
Engineering Education # 12, December 2013
DOI: 10.7463/1213.0669629
At present time many research groups working in the field of microelectronics are trying to develop a technology for producing a memristor also investigating possibilities of its integration into the CMOS process. Main classes of materials with memory effect such as metallic oxides, chalcogenides, solid electrolytes, polymers etc. were found. All of these classes have resistive switching properties; but their switching mechanisms are different. There are not fully studied elements in literature, but for some of them a stable memristive effect was achieved. Also an operating model for these elements was developed. In this article the authors present a review of such structures with a memory effect based on inorganic materials and analysis of their characteristics along with possible application domains.
Modeling of frequency and power characteristics of titanium dioxide memristor
Engineering Education # 05, May 2012
DOI: 10.7463/0512.0409216
The authors carried out numerical modeling of titanium dioxide memristor working frequency and power consumption. The model of memristor consists of two resistors connected in series; their resistance depends on the layers barrier between the oxygen layer and the TiO2 layer. For the first time the memristor power consumption at structural parameters dependences was analyzed. It was shown that  significant increase of working frequency under the conditions of decrease of active layer thickness and total memristor thickness leads to the increase of memristor power consumption. The optimal values of active layer thickness and total memristor thickness were defined in this article, basing on the obtained data.
 
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