Другие журналы
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Loskutov
77-30569/332565 Advanced charge instability control methods in gate dielectric of MOS devices
Engineering Education # 04, April 2012 The authors analyze modern control methods of MOS-devices and charge stability of gate dielectric structures of metal-dielectric-semiconductor. Features of modern MOS-devices were defined subject to reduction of engineering rates. It was shown that the most perspective method was the electrophysical one based on the method of controlled current load; it allowed to analyze fast relaxation processes in dielectric directly after stresses.
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