Andreev

Model describing generation and evolution of carrier traps in injection-modified multilayer nanosized dielectric films of MIS-structure in the mode of powerfield tunnel injection of electrons into dielectric with direct current. The parameters of model, which characterize the processes of charge state changing of MIS-structure with thermal film SiO2 passivated with the PSG layer and MIS-structure Si-SiO2 – polycrystalline silicon (Si-SiO2-Si*), in the conditions of controlled powerfield tunnel injection of electrons into dielectric. The comparison of experimental and simulation data was carried out.